PBSS4630PA NXP NXP PBSS4630PA NPN Low Saturation Bipolar Transistor, 6 A 30 V, 3-pin SOT-1061
Description
NXP PBSS4630PA NPN Low Saturation Bipolar Transistor, 6 A 30 V, 3-pin SOT-1061
The product with part number PBSS4630PA (NXP PBSS4630PA NPN Low Saturation Bipolar Transistor, 6 A 30 V, 3-pin SOT-1061)
is from company NXP and distributed with basic unit price 0,30 EUR. Minimal order quantity is 1 pc.
CategorySmall Signal ConfigurationSingle Dimensions2.1 x 2.1 x 0.65mm Height0.65mm Length2.1mm Maximum Base Emitter Saturation Voltage1.1 V Maximum Collector Base Voltage30 V Maximum Collector Emitter Saturation Voltage275 mV Maximum Collector Emitter Voltage30 V Maximum DC Collector Current6 A Maximum Emitter Base Voltage6 V Maximum Operating Frequency100 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation2.1 W Minimum DC Current Gain180 Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOT-1061 Pin Count3 Transistor TypeNPN Width2.1mm Product Details Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors
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