PBSS4240DPN NXP NXP PBSS4240DPN NPN+PNP Dual Low Saturation Bipolar Transistor, 1.35 A 40 V, 6-pin TSOP
Description
NXP PBSS4240DPN NPN+PNP Dual Low Saturation Bipolar Transistor, 1.35 A 40 V, 6-pin TSOP
The product with part number PBSS4240DPN (NXP PBSS4240DPN NPN+PNP Dual Low Saturation Bipolar Transistor, 1.35 A 40 V, 6-pin TSOP)
is from company NXP and distributed with basic unit price 0,23 EUR. Minimal order quantity is 1 pc.
CategoryBipolar Power ConfigurationDual Dimensions1 x 3.1 x 1.7mm Height1mm Length3.1mm Maximum Base Emitter Saturation Voltage1.2 V Maximum Collector Base Voltage40 V Maximum Collector Emitter Saturation Voltage0.53 V Maximum Collector Emitter Voltage40 V Maximum DC Collector Current1.35 A Maximum Emitter Base Voltage5 V Maximum Operating Frequency150 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation1.1 W Minimum DC Current Gain50 Minimum Operating Temperature-65 °C Mounting TypeSurface Mount Number of Elements per Chip2 Package TypeTSOP Pin Count6 Transistor TypeNPN, PNP Width1.7mm Product Details Low Saturation Voltage Dual NPN/PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors
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