PBSS4032SPN NXP NXP PBSS4032SPN NPN+PNP Dual Low Saturation Bipolar Transistor, 5.7/-4.8A 30V, 8-pin SOT-96
Description
NXP PBSS4032SPN NPN+PNP Dual Low Saturation Bipolar Transistor, 5.7/-4.8A 30V, 8-pin SOT-96
The product with part number PBSS4032SPN (NXP PBSS4032SPN NPN+PNP Dual Low Saturation Bipolar Transistor, 5.7/-4.8A 30V, 8-pin SOT-96)
is from company NXP and distributed with basic unit price 0,47 EUR. Minimal order quantity is 1 pc.
CategorySmall Signal ConfigurationDual Dimensions5 x 4 x 1.75mm Height1.75mm Length5mm Maximum Base Emitter Saturation Voltage-0.9 (PNP) V, 1.05 (NPN) V Maximum Collector Base Voltage30 (NPN) V, -30 (PNP) V Maximum Collector Emitter Saturation Voltage-165 (PNP) mV, 450 (NPN) mV Maximum Collector Emitter Voltage30 (NPN) V, -30 (PNP) V Maximum DC Collector Current-4.8 (PNP) A, 5.7 (NPN) A Maximum Emitter Base Voltage5 (NPN) V, -5 (PNP) V Maximum Operating Frequency100 MHz Maximum Operating Temperature150 °C Maximum Power Dissipation2.3 W Minimum DC Current Gain200 (PNP)、300 (NPN) Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip2 Package TypeSOT-96 Pin Count8 Transistor TypeNPN, PNP Width4mm Product Details Low Saturation Voltage Dual NPN/PNP Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors
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