PBSS4032NZ NXP NXP PBSS4032NZ NPN Low Saturation Bipolar Transistor, 4.9 A 30 V SOT-223
Description
NXP PBSS4032NZ NPN Low Saturation Bipolar Transistor, 4.9 A 30 V SOT-223
The product with part number PBSS4032NZ (NXP PBSS4032NZ NPN Low Saturation Bipolar Transistor, 4.9 A 30 V SOT-223)
is from company NXP and distributed with basic unit price 0,61 EUR. Minimal order quantity is 1 pc.
CategorySmall Signal ConfigurationSingle Dimensions6.7 x 3.7 x 1.8mm Height1.8mm Length6.7mm Maximum Base Emitter Saturation Voltage1.05 V Maximum Collector Base Voltage30 V Maximum Collector Emitter Saturation Voltage375 mV Maximum Collector Emitter Voltage30 V Maximum DC Collector Current4.9 A Maximum Emitter Base Voltage5 V Maximum Operating Frequency100 MHz Maximum Operating Temperature+150 °C Maximum Power Dissipation2000 mW Minimum DC Current Gain150 Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeSOT-223 Pin Count3 Transistor TypeNPN Width3.7mm Product Details Low Saturation Voltage NPN Transistors, NXP A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications. Bipolar Transistors, NXP Semiconductors
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